| PART |
Description |
Maker |
| NDL7564P NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?碌F Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?掳C to 85?掳C
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX7663JB-BC-AZ NX7663JB-BC |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
CEL[California Eastern Labs]
|
| NDL7513P_00 NDL7513P NDL7513P1 NDL7513P1C NDL7513P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1310 nm OTDR APPLICATION
|
NEC[NEC]
|
| NDL7553P_00 NDL7553P NDL7553P1 NDL7553P1C NDL7553P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION
|
NEC[NEC]
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX8561JC NX8501CC-BA NX8501BC-BA NX8501AC-BA NX856 |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
|
NEC[NEC]
|
| NDL7001 NDL7001L NDL7401P NDL7401P1 NDL7401P1C NDL |
1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER 1 310纳米InGaAsP的应变量子阱的DC -异质结半导体激光器同轴模块与单模光
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX7526BF-AA-AZ NX7526BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (95 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7527BF-AA-AZ NX7527BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (120 mW MIN)
|
CEL[California Eastern Labs]
|
| NDL7408PLD NDL7001 NDL7001L NDL7401P NDL7408P NDL7 |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER 1 310纳米InGaAsP的应变量子阱的DC -异质结半导体激光器同轴模块与单模光
|
http://
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NX7661JB-BC-AZ |
NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) 邻舍1625纳米InGaAsP多量子阱计划生育脉冲激光二极管应用浸时域反射计20毫瓦最小包装）
|
California Eastern Laboratories, Inc.
|
